Positron beam technique for the study of defects at the Si/SiO2 interface of a polysilicon gated MOS system

被引：0
作者：
Clement, M
DeNijs, JMM
Schut, H
VanVeen, A
Mallee, R
Balk, P
机构：
来源：
DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work demonstrates that positrons implanted into a 60 nm n-type polysilicon layer with large grains, can be pushed out of this layer by an externally induced electric field. In the case of a metal-oxide-silicon (MOS) system with a such a polysilicon gate, polysilicon-implanted positrons can be efficiently transported towards the SiO2/Si interface where they all are collected. This technique offers new and interesting possibilities to study defects at the SiO2/Si interface of technologically important MOS systems.
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页码：143 / 148
页数：6
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