Enhancement of photoluminescence signal from ultrathin layers with silicon nanocrystals

被引：15

作者：

Dyakov, S. A. ^{[1
]}

Zhigunov, D. M. ^{[2
]}

Hartel, A. ^{[3
]}

Zacharias, M. ^{[3
]}

Perova, T. S. ^{[1
]}

Timoshenko, V. Yu ^{[2
]}

机构：

[1] Trinity Coll Dublin, Dept Elect & Elect Engn, Dublin 2, Ireland

[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia

[3] Univ Freiburg, Fac Engn, IMTEK, D-79110 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 06期

关键词：

buffer layers; elemental semiconductors; nanofabrication; nanostructured materials; photoluminescence; plasma CVD; silicon; EMISSION;

D O I：

10.1063/1.3682537

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the model of oscillating dipoles, we simulated the photoluminescence intensity of a triple-layered structure where the silicon nanocrystals layer was enclosed by buffer and capping silicon dioxide layers. It was found that a structure with an optimized buffer layer thickness exhibited photoluminescence which was approximately 20 times more intense than that from the structure without a buffer layer. Theoretical simulations were verified by photoluminescence measurements for the corresponding structures with silicon nanocrystals fabricated by plasma enhanced chemical vapour deposition. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3682537]

引用

页数：4

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