Si/SiGe electron resonant tunneling diodes with graded spacer wells

被引：11
作者：
Paul, DJ
See, P
Bates, R
Griffin, N
Coonan, BP
Redmond, G
Crean, GM
Zozoulenko, IV
Berggren, KF
Holländer, B
Mantl, S
机构：
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[2] Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland
[3] Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden
[4] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 26期
关键词：
D O I：
10.1063/1.1381042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resonant tunneling diodes have been fabricated using graded Si1-xGex (x=0.3 -->0.0) spacer wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.7Ge0.3 n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm(2) with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. (C) 2001 American Institute of Physics.
引用
收藏
页码：4184 / 4186
页数：3
相关论文
共 14 条
[1]  
Ahmed A. S. H, UNPUB
[2]  
COMPANO R, 1999, TECHNOLOGY ROADMAP N
[3]   Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio [J].
Duschl, R ;
Schmidt, OG ;
Eberl, K .
APPLIED PHYSICS LETTERS, 2000, 76 (07) :879-881
[4]   MODULATION-DOPED N-TYPE SI/SIGE WITH INVERTED INTERFACE [J].
ISMAIL, K ;
CHU, JO ;
SAENGER, KL ;
MEYERSON, BS ;
RAUSCH, W .
APPLIED PHYSICS LETTERS, 1994, 65 (10) :1248-1250
[5]  
Paul DJ, 1999, ADV MATER, V11, P191, DOI 10.1002/(SICI)1521-4095(199903)11:3<191::AID-ADMA191>3.0.CO
[6]  
2-3
[7]   Si/SiGe electron resonant tunneling diodes [J].
Paul, DJ ;
See, P ;
Zozoulenko, IV ;
Berggren, KF ;
Kabius, B ;
Holländer, B ;
Mantl, S .
APPLIED PHYSICS LETTERS, 2000, 77 (11) :1653-1655
[8]   Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates [J].
Paul, DJ ;
Ahmed, A ;
Griffin, N ;
Pepper, M ;
Churchill, AC ;
Robbins, DJ ;
Wallis, DJ .
THIN SOLID FILMS, 1998, 321 :181-185
[9]   ELECTRONIC-BAND PARAMETERS IN STRAINED SI(1-X)GE(X) ALLOYS ON SI(1-Y)GE(Y) SUBSTRATES [J].
RIEGER, MM ;
VOGL, P .
PHYSICAL REVIEW B, 1993, 48 (19) :14276-14287
[10]   Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities [J].
Rommel, SL ;
Dillon, TE ;
Berger, PR ;
Thompson, PE ;
Hobart, KD ;
Lake, R ;
Seabaugh, AC .
IEEE ELECTRON DEVICE LETTERS, 1999, 20 (07) :329-331
12