Dielectric properties of MgO-doped compositionally graded multilayer barium strontium titanate films

被引：76
|
作者：
Cole, M. W. [2 ]
Ngo, E. [2 ]
Hirsch, S. [2 ]
Okatan, M. B. [1 ]
Alpay, S. P. [1 ]
机构：
[1] Univ Connecticut, Inst Mat Sci, CMBE Dept, Mat Sci & Engn Program, Storrs, CT 06269 USA
[2] USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA
来源：
APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 07期
关键词：
D O I：
10.1063/1.2870079
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have grown 5 mol % MgO-doped multilayered Ba1-xSrxTiO3 (BST) films having a nominal thickness of 220 nm with compositions of each layer as BST60/40, BST75/25, and BST90/10 (upgraded). We also fabricated undoped upgraded BST and uniform BST60/40 films for comparison. Results show that Mg-doping improves dielectric loss (tan delta=0.008) and yields better surface roughness (similar to 3.1 nm) compared to undoped upgraded BST. Mg-doped films displayed excellent temperature stability with temperature coefficient of capacitances of -0.94 and 1.14 ppt/degrees C from 20 to 90 degrees C and 20 to -10 degrees C, respectively. Mg doping resulted in a moderate dielectric tunability (29%) compared to undoped BST (65.5%) at 444 kV/cm. (C) 2008 American Institute of Physics.
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页数：3
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