Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

被引：91

作者：

Sato, Kosuke ^{[1
,2
]}

Yasue, Shinji ^{[2
]}

Yamada, Kazuki ^{[2
]}

Tanaka, Shunya ^{[2
]}

Omori, Tomoya ^{[2
]}

Ishizuka, Sayaka ^{[2
]}

Teramura, Shohei ^{[2
]}

Ogino, Yuya ^{[2
]}

Iwayama, Sho ^{[2
,3
]}

Miyake, Hideto ^{[3
]}

Iwaya, Motoaki ^{[2
]}

Takeuchi, Tetsuya ^{[2
]}

Kamiyama, Satoshi ^{[2
]}

Akasaki, Isamu ^{[2
,4
]}

机构：

[1] Asahi Kasei Corp, Innovat Devices R&D Ctr, Fuji, Shizuoka 4168501, Japan

[2] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[3] Mie Univ, Grad Sch Reg Innovat Studies, Tsu, Mie 5148507, Japan

[4] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2020年 / 13卷 / 03期

关键词：

laser diode; AlGaN; sapphire; ultraviolet; electroluminescence; HIGH-QUALITY ALGAN; WIDTH DEPENDENCE; CRACK-FREE; SAPPHIRE; GROWTH; FILMS; ALN;

D O I：

10.35848/1882-0786/ab7711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaN ultraviolet-B laser diode at 298 nm was realized at room temperature using pulse operation. The laser diode has a lattice-relaxed Al0.6Ga0.4N layer from the underlying AlN/sapphire template and a composition-graded p-AlGaN cladding layer. The multimodal laser spectrum with proper polarization properties at 298 nm was obtained over the threshold current at 0.90 A corresponding to 67 kA cm(-2). By broadening the width of the p-electrode to 11.5 mu m, the threshold current density decreased to 41 kA cm(-2).

引用

页数：5

共 4 条

[1] Two-dimensional growth of AlN and GaN on lattice-relaxed Al0.4Ga0.6N buffer layers prepared with high-temperature-grown AlN buffer on sapphire substrates and fabrication of multiple-quantum-well structures
Ohba, Y
Sato, R
Kaneko, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (12A): : L1293 - L1296
[2] Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes
Shimokawa, Moe
Teramura, Shohei
Tanaka, Shunya
Omori, Tomoya
Yamada, Kazuki
Ogino, Yuya
Yabutani, Ayumu
Iwayama, Sho
Sato, Kosuke
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Miyake, Hideto
JOURNAL OF CRYSTAL GROWTH, 2021, 575
[3] Growth mode modulation and crystalline quality improvement of highly relaxed n-Al0.6Ga0.4N on high-temperature-annealing AlN/sapphire template via SiH4-pretreatment
Wang, Dadi
Liu, Zhibin
Guo, Yanan
Yan, Jianchang
Li, Jinmin
Wang, Junxi
JOURNAL OF CRYSTAL GROWTH, 2023, 610
[4] Reduction of dislocation density in lattice-relaxed Al0.68Ga0.32N film grown on periodical 1 μm spacing AlN pillar concave-convex patterns and its effect on the performance of UV-B laser diodes
Omori, Tomoya
Yabutani, Ayumu
Tanaka, Shunya
Yamada, Kazuki
Shimokawa, Moe
Hasegawa, Ryota
Iwayama, Sho
Miyake, Hideto
Takeuchi, Tetsuya
Kamiyama, Satoshi
Iwaya, Motoaki
APPLIED PHYSICS EXPRESS, 2022, 15 (03)

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