Mesoscopic kondo screening effect in a single-electron transistor embedded in a metallic ring

被引:52
作者
Hu, H [1 ]
Zhang, GM
Yu, L
机构
[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China
[2] Tsing Hua Univ, Ctr Adv Study, Beijing 100084, Peoples R China
[3] Abdus Salam Int Ctr Theoret Phys, I-34100 Trieste, Italy
[4] Acad Sinica, Inst Theoret Phys, Beijing 100080, Peoples R China
关键词
D O I
10.1103/PhysRevLett.86.5558
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi (0)(K) = h(upsilonF)/T-K(0) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.
引用
收藏
页码:5558 / 5561
页数:4
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