Room-temperature pulsed operation of GaN-based laser diodes on a-face sapphire substrate grown by low-pressure metalorganic chemical vapor deposition

被引：6
|
作者：
Kimura, Y [1 ]
Miyachi, M [1 ]
Takahashi, H [1 ]
Tanaka, T [1 ]
Nishitsuka, M [1 ]
Watanabe, A [1 ]
Ota, H [1 ]
Chikuma, K [1 ]
机构：
[1] Pioneer Elect Corp, Corp Res & Dev Labs, Tsurugashima, Saitama 3502288, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10B期
关键词：
GaN; InGaN; AlGaN; MOCVD; laser;
D O I：
10.1143/JJAP.37.L1231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on the room-temperature pulsed current operation of GaN-based laser diodes on a (11(2) over bar 0) (a-face) sapphire substrate grown by low-pressure metalorganic chemical vapor deposition (LP MOCVD). Ethyl biscyclopentadienyl magnesium (Et-Cp2Mg) and methyl silane (Me-SiH3) were used as precursors for dopants. The cavity mirror facets were formed by cleaving an a-face sapphire substrate along (<1(1)over bar>02) (r-face). The threshold current density was 41 kA/cm(2) and the operating voltage at the threshold was 35 V. Above the threshold, laser emission was observed at 411 nm.
引用
收藏
页码：L1231 / L1233
页数：3
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