Single precursor photolitic chemical vapor deposition of silica film using a dielectric barrier discharge xenon excimer lamp

被引：34

作者：

Yokotani, A ^{[1
]}

Takezoe, N ^{[1
]}

Kurosawa, K ^{[1
]}

Igarashi, T ^{[1
]}

Matsuno, H ^{[1
]}

机构：

[1] USHIO INC,CTR RES & DEV,HIMEJI,HYOGO 67102,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 10期

关键词：

D O I：

10.1063/1.117594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silica film has been produced at room temperature by a single precursor process of photolitic chemical vapor deposition using a newly developed Xe excimer lamp. Tetraethoxyorthosilicate (TEOS) has been used as a raw material. Transparent thin film of SiO2 was obtained on single crystalline Al2O3 substrates and its properties were evaluated by means of the reflection Fourier transformation-infrared spectroscopy, the scanning electron microscopy, and ultraviolet-visible spectrometry. Consequently, it was found that the main component of the film was SiO2 and very small amounts of residual organic materials were contained. It was also found that the film was very dense and the refractive indices were only 1.7% smaller than that of bulk silica glass. (C) 1996 American Institute of Physics.

引用

页码：1399 / 1401

页数：3

共 5 条

[1] DIRECT PHOTO-DEPOSITION OF SILICON DIOXIDE FILMS USING A XENON EXCIMER LAMP [J].