Ductile fracture;
Necking forming limit diagram;
Fracture forming limit diagram;
Sheet metal forming;
Modified maximum force criterion;
Fracture pattern transition;
MAXIMUM FORCE CRITERION;
HIGH-STRENGTH STEEL;
DUCTILE ANISOTROPIC SHEETS;
LOCALIZED NECKING;
MATERIAL PROPERTY;
VOID NUCLEATION;
LODE PARAMETER;
YIELD CRITERIA;
STRAIN-RATE;
STRESS;
D O I:
10.1016/j.ijplas.2020.102706
中图分类号:
TH [机械、仪表工业];
学科分类号:
0802 ;
摘要:
It has been accepted that the formability of a sheet metal with a moderate ductility can be limited by not only localized necking (LN), but also ductile fracture (DF). In this study, a theoretical prediction framework is developed for a comprehensive formability characterization, in which forming limit curves at LN (FLCN) and DF (FLCF) are elaborately correlated by considering strain path evolution. A dual-phase steel material (DP590 sheet metal) is selected with a series of DF and Nakajima tests performed. A newly proposed DF model (uncoupled type) is calibrated by implementing a hybrid experiment-simulation method in line with the DF tests, which are designed to achieve DF under distinct stress states, such as simple shear (SS), uniaxial tension (UT), plane strain tension (PST), and balanced biaxial tension (BBT). The resulting three dimensional (3D) fracture surface demonstrates a good agreement with the tested data. The modified maximum force criterion (MMFC) is selected for the theoretical identification of strain path evolution. The calibrated MMFC results in a FLCN exhibiting a certain level of underestimation as compared to the tested data in the range of positive minor strain. The MMFC is improved (iMMFC) by incorporating with an initial strain path-based function for a higher accuracy in characterizing evolutive strain paths; the resulting FLCN is observed to have a better performance than that of MMFC. Theoretical FLCFs are determined by the integral of ductile damage increment (defined by the DF model calibrated) over each identified strain path from UT to BBT. After considering strain path evolution, different deformation stages are added into the finalized forming limit diagrams including both FLCF and FLCN. It is found that the FLCF based on iMMFC model demonstrates acceptable deviations as compared to all the tested cracking data. Moreover, this FLCF intersects with the corresponding theoretical FLCN as load path approaches from UT to BBT, representing a fracture pattern transition from a LN band-accompanied DF to the one without LN band; this prediction is further validated by experimental observations. The FLCF based on MMFC fails to predict this transition behavior. The current study confirms the presence of a competition between LN-induced failure and DF-induced failure for sheet metals. Moreover, all of these findings advance the insight into the importance of performing a DF prediction aside of a FLCN prediction, especially for the case where a sheet metal with a moderate ductility shows a fracture pattern transition behavior.
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Chung, Kwansoo
Kim, Hyunki
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Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Kim, Hyunki
Lee, Chulhwan
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机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Chung, Kwansoo
Lee, Chulhwan
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机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Lee, Chulhwan
Kim, Hyunki
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h-index: 0
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kwansoo
Ma, Ning
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Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Ma, Ning
Park, Taejoon
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Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Park, Taejoon
Kim, Dongun
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h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Kim, Dongun
Yoo, Donghoon
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机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Yoo, Donghoon
Kim, Chongmin
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h-index: 0
机构:
Pohang Univ Sci & Technol, Grad Inst Ferrous Technol, Pohang 790784, Gyeongbuk, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kwansoo
Ahn, Kanghwan
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h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Ahn, Kanghwan
Yoo, Dong-Hoon
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机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Yoo, Dong-Hoon
Chung, Kyung-Hwan
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h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kyung-Hwan
Seo, Min-Hong
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h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Seo, Min-Hong
Park, Sung-Ho
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h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Chung, Kwansoo
Kim, Hyunki
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Kim, Hyunki
Lee, Chulhwan
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h-index: 0
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Chung, Kwansoo
Lee, Chulhwan
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
Lee, Chulhwan
Kim, Hyunki
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South KoreaSeoul Natl Univ, Engn Res Inst, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kwansoo
Ma, Ning
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Ma, Ning
Park, Taejoon
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Park, Taejoon
Kim, Dongun
论文数: 0引用数: 0
h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Kim, Dongun
Yoo, Donghoon
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Yoo, Donghoon
Kim, Chongmin
论文数: 0引用数: 0
h-index: 0
机构:
Pohang Univ Sci & Technol, Grad Inst Ferrous Technol, Pohang 790784, Gyeongbuk, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kwansoo
Ahn, Kanghwan
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Ahn, Kanghwan
Yoo, Dong-Hoon
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Yoo, Dong-Hoon
Chung, Kyung-Hwan
论文数: 0引用数: 0
h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Chung, Kyung-Hwan
Seo, Min-Hong
论文数: 0引用数: 0
h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea
Seo, Min-Hong
Park, Sung-Ho
论文数: 0引用数: 0
h-index: 0
机构:
POSCO Tech Res Labs, Gwangyang Si 545090, Jeonnam, South KoreaSeoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151742, South Korea