Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials

被引：29

作者：

Fang, Lina Wei-Wei ^{[1
]}

Pan, Ji-Sheng ^{[2
]}

Zhao, Rong ^{[3
]}

Shi, Luping ^{[3
]}

Chong, Tow-Chong ^{[3
]}

Samudra, Ganesh ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore

[3] ASTAR, Data Storage Inst, Singapore 117608, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.2837189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band alignment of amorphous Ge2Sb2Te5 and various substrates was obtained using high-resolution x-ray photoelectron spectroscopy. The valence band offset of Ge2Sb2Te5 on various complementary-metal-oxide-semiconductor (CMOS) materials, i.e., Si, SiO2, HfO2, Si3N4 and NiSi, were investigated with the aid of the core level, valence band, and energy loss spectra. Energy band lineups of Ge2Sb2Te5 on these materials were thus determined which can be used as for phase change memory device engineering and integration with CMOS technology. (c) 2008 American Institute of Physics.

引用

页数：3

共 17 条

[1]

[Anonymous], 2003, VLSI TECHNOLOGY

[2] Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001) [J].

Cook, TE ;

Fulton, CC ;

Mecouch, WJ ;

Tracy, KM ;

Davis, RF ;

Hurt, EH ;

Lucovsky, G ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (07) :3995-4004

[3]

Ha Y. H., 2003, VLSI S, P175

[4] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].

KRAUT, EA ;

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623

[5]

Lai S, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P255

[6] Stacked chalcogenide layers used as multi-state storage medium for phase change memory [J].

Lai, Y. F. ;

Feng, J. ;

Qiao, B. W. ;

Cai, Y. F. ;

Lin, Y. Y. ;

Tang, T. A. ;

Cai, B. C. ;

Chen, B. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2006, 84 (1-2) :21-25

[7] The redistribution of oxygen at AlOx/CoFe interface of magnetic tunnel junctions through thermal treatment -: art. no. 093905 [J].

Lee, D ;

Hong, JG .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[8]

MATSUI Y, 2006, INT ELECT DEV M

[9]

Matsuzaki N, 2005, INT EL DEVICES MEET, P757

[10] Photoemission study of energy-band alignments and gap-state density distributions for high-k dielectrics [J].

Miyazaki, S ;

Miyazaki, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2212-2216

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