Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display

被引：11

作者：

Hong, YT ^{[1
]}

Nahm, JY ^{[1
]}

Kanicki, J ^{[1
]}

机构：

[1] Univ Michigan, Dept EECS, Solid State Elect Lab, Ann Arbor, MI 48105 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 16期

关键词：

All Open Access; Green;

D O I：

10.1063/1.1617372

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on opto-electrical properties of a current-driven 200 dpi active-matrix organic polymer red light-emitting display (AM-PLED) based on four hydrogenated amorphous silicon thin-film transistor pixel electrode circuits. The AM-PLED luminance and effective light-emission efficiency were 30 cd/m(2) and 0.3 cd/A, respectively, at the data current equal to 25 mA. The display electroluminescent spectrum has a peak located at and the full width at half maximum value of 644 and 95 nm, respectively, and Commission Internationale de l'Eclairage color coordinates of (0.66,0.33). (C) 2003 American Institute of Physics.

引用

页码：3233 / 3235

页数：3

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