Efficient Hot Electron Extraction in Ag-Cu/TiO2 for High Performance Lateral Photovoltaic Effect

被引:10
作者
Dong, Xinyuan [1 ,2 ]
Zheng, Diyuan [1 ,2 ]
Lu, Jing [1 ,2 ]
Niu, Yiru [1 ,2 ]
Wang, Hui [1 ,2 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Phys & Astron, State Key Lab Adv Opt Commun Syst & Networks, Shanghai 200240, Peoples R China
[2] Shanghai Jiao Tong Univ, Res Inst Micro Nano Sci & Technol, Key Lab Thin Film & Microfabricat Technol, Minist Educ, Shanghai 200240, Peoples R China
关键词
Sensitivity; Absorption; Free electron lasers; Nanoparticles; Surface plasmons; Substrates; Silicon; Lateral photovoltaic effect; surface plasmon; hot electron injection; photodetectors; PLASMON; GENERATION;
D O I
10.1109/LED.2021.3106740
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Plasmon-enhanced lateral photovoltaic effect (LPE) in metal-semiconductor Schottky junctions has been proposed as a fascinating alternative for position sensitive detectors (PSDs). The efficiency of plasmon-induced hot electron injection into semiconductors which affects by nanoparticle composition is an important parameter for surface plasmon based LPE. In this letter, we modified the d-band density of states (DOS) of Cu nanoparticles (NPs) by depositing Ag-Cu composite nanoparticles to improve the hot electron injection efficiency, and observed an enhanced LPE in TiO2/Ag-Cu NPs/Si structure. It exhibits better lateral photovoltage sensitivity than samples with Cu NPs and Ag NPs in the visible region, especially under 445 nm laser irradiation. These findings offer an effective avenue for facilitating the photoelectric conversion in LPE, while opening the door to the possibilities in high sensitivity LPE-based optoelectronic device applications.
引用
收藏
页码:1500 / 1503
页数:4
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