Spectroscopic phonon and extended x-ray absorption fine structure measurements on 3C-SiC/Si (001) epifilms

被引：6

作者：

Talwar, Devki N. ^{[1
,2
]}

Wan, Linyu ^{[3
]}

Tin, Chin-Che ^{[4
,5
]}

Lin, Hao-Hsiung ^{[6
,7
]}

Feng, Zhe Chuan ^{[3
]}

机构：

[1] Indiana Univ Penn, Dept Phys, 975 Oakland Ave,56 Weyandt Hall, Indiana, PA 15705 USA

[2] Univ North Florida, Dept Phys, 1 UNF Dr, Jacksonville, FL 32224 USA

[3] Guangxi Univ, Sch Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning 530004, Peoples R China

[4] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

[5] Tunku Abdul Rahman Univ Coll, Fac Engn, Dept Mat Engn, Kuala Lumpur 53300, Malaysia

[6] Natl Taiwan Univ, Grad Inst Elect, Taipei 10617, Taiwan

[7] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2018年 / 427卷

基金：

中国国家自然科学基金;

关键词：

Raman scattering spectroscopy; Infrared reflectivity; Synchrotron radiation x-ray absorption fine structure; Chemical vapor deposition; Brugeeman's effective medium theory; TRANSVERSE EFFECTIVE CHARGE; RAMAN-SCATTERING; INFRARED REFLECTANCE; OPTICAL PHONONS; HETEROEPITAXIAL GROWTH; PRESSURE-DEPENDENCE; RESIDUAL-STRESS; SIC FILMS; SILICON; SEMICONDUCTORS;

D O I：

10.1016/j.apsusc.2017.07.266

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Comprehensive experimental and theoretical studies are reported to assess the vibrational and structural properties of 3C-SiC/Si (001) epilayers grown by chemical vapor deposition in a vertical reactor configuration. While the phonon features are evaluated using high resolution infrared reflectance (IRR) and Raman scattering spectroscopy (RSS) - the local inter-atomic structure is appraised by synchrotron radiation extended x-ray absorption fine structure (SR-EXAFS) method. Unlike others, our RSS results in the near backscattering geometry revealed markedly indistinctive longitudinal-and transverse-optical phonons in 3C-SiC epifilms of thickness d < 0.4 mu m. The estimated average value of biaxial stress is found to be an order of magnitude smaller while the strains are two-orders of magnitude lower than the lattice misfits between 3C-SiC and Si bulk crystals. Bruggeman's effective medium theory is utilized to explain the observed atypical IRR spectra in 3C-SiC/Si (001) epifilms. High density intrinsic defects present in films and/or epilayer/substrate interface are likely to be responsible for (a) releasing misfit stress/strains, (b) triggering atypical features in IRR spectra, and (c) affecting observed local structural traits in SR-EXAFS. (c) 2017 Elsevier B.V. All rights reserved.

引用

页码：302 / 310

页数：9

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