Mode-locked Cr:LiSAF laser far off the gain peak: tunable sub-200-fs pulses near 1 μm

被引:6
作者
Demirbas, Umit [1 ,2 ]
Thesinga, Jelto [1 ]
Kellert, Martin [1 ]
Reuter, Simon [1 ]
Sumpf, Bernd [3 ]
Pergament, Mikhail [1 ]
Kaertner, Franz X. [1 ,4 ,5 ]
机构
[1] Deutsch Elektronen Synchrotron DESY, Ctr Free Electron Laser Sci CFEL, Notkestr 85, D-22607 Hamburg, Germany
[2] Antalya Bilim Univ, Dept Elect & Elect Engn, Laser Technol Lab, TR-07190 Antalya, Turkey
[3] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst gGmbH, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany
[4] Univ Hamburg, Phys Dept, Luruper Chaussee 149, D-22761 Hamburg, Germany
[5] Hamburg Ctr Ultrafast Imaging, Luruper Chaussee 149, D-22761 Hamburg, Germany
基金
欧洲研究理事会;
关键词
TI-SAPPHIRE LASER; CR/LISAF LASER; DIODE; FEMTOSECOND; AMPLIFICATION; GENERATION; NM; CR; ABSORPTION; POWER;
D O I
10.1364/AO.440263
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report, to the best of our knowledge, the first mode-locking results of a Cr:LiSAF laser near the 1 mu M region. The system is pumped only by a single 1.1 W high-brightness tapered diode laser at 675 nm. A semiconductor saturable absorber mirror (SESAM) with a modulation depth of 1.5% and non-saturable losses below 0.5% was used for mode-locking. Once mode-locked, the Cr:LiSAF laser produced almost-transform-limited sub-200-fs pulses with up to 12.5 mW of average power at a repetition rate of 150 MHz. Using an intracavity birefringent filter, the central wavelength of the pulses could be smoothly tuned in the 1000-1020 nm range. Via careful dispersion optimization, pulse widths could be reduced down to the 110-fs level. The performance in this initial study was limited by the design parameters of the SESAM used, especially its passive losses and could be improved with an optimized SESAM design. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:9054 / 9061
页数:8
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