Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates

被引：34

作者：

Merckling, C. ^{[1
]}

Saint-Girons, G. ^{[2
]}

Botella, C. ^{[2
]}

Hollinger, G. ^{[2
]}

Heyns, M. ^{[1
,3
]}

Dekoster, J. ^{[1
]}

Caymax, M. ^{[1
]}

机构：

[1] IMEC VZW, Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[2] Ecole Cent Lyon, CNRS, UMR5270, INL, F-69134 Ecully, France

[3] Katholieke Univ Leuven, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期

关键词：

INTERFACE; FILMS;

D O I：

10.1063/1.3558997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin films of perovskite type BaTiO3 (BTO) oxide have been grown epitaxially directly on Ge(001) surface at high temperature using molecular beam epitaxy. A stable (2 x 1) BaGex surface periodicity is the critical enabling template for subsequent BTO heteroepitaxy on Ge(001). Reflection high energy electron diffraction (RHEED) and transmission electron microscopy indicate that high quality heteroepitaxy on Ge-on-Si(001) take place with < 100 > BTO(001)parallel to < 110 > Ge(001) confirming a 45 degrees rotation epitaxial relationship. X-ray diffraction has been used to study the BTO lattice parameters and we evidenced that both tetragonal and cubic phases of BTO are present in the epilayer. (C) 2011 American Institute of Physics. [doi:10.1063/1.3558997]

引用

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