Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated fully depleted SOI devices

被引：54

作者：

Adell, Philippe C. ^{[1
]}

Barnaby, Hugh J. ^{[2
]}

Schrimpf, Ron D. ^{[3
]}

Vermeire, Bert ^{[2
]}

机构：

[1] Jet Propuls Lab, Pasadena, CA 91109 USA

[2] Arizona State Univ, Tempe, AZ 85287 USA

[3] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2007年 / 54卷 / 06期

关键词：

band-to-band tunneling; fully depleted SOI; GIDL; high current regime; total ionizing dose;

D O I：

10.1109/TNS.2007.911419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose a model, validated with simulations, describing how hand-to-hand tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. It is demonstrated that the drain current dependence on total ionizing dose at negative gate bias can result from the combination of BBT and charge buildup in the BOX, including the transition to the high current state. The role of impact ionization is examined.

引用

收藏

页码：2174 / 2180

页数：7

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