Influence of Bonding Atmosphere on Low-Temperature Wafer Bonding

被引：1

作者：

Wang, Ying-Hui ^{[1
]}

Suga, Tadatomo ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年

关键词：

SURFACE ACTIVATION METHOD; ROOM-TEMPERATURE; SILICON; INTERFACES;

D O I：

10.1109/ECTC.2010.5490936

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of bonding atmosphere was investigated for the wafer bonding at 25 similar to 200 degrees C using a surface activated bonding method. The results of the analysis of activated Si surfaces under different vacuum background and the residual gases in vacuum before and after Ar fast atom beam irradiation is reported. Based on the analysis, bonding of Si wafers in nitrogen atmosphere is demonstrated with showing the effect of the timing of nitrogen introduction into the bonding chamber. The bonding energy of the bonded Si-Si wafer may reach 2 J/m(2) under the vacuum pressure of 5x10(-5) Pa and N-2 atmosphere by controlling the exposure time and the residual gas of water to less than 5x10(-4) Pa.s. Using Au or Cu thin-films can reduce the influence of bonding atmosphere. Bond interfaces with few voids can be achieved, which is benefit on diffusion and plastic deformation of the Au or Cu thin-films.

引用

页码：435 / 439

页数：5

共 12 条

[1] [Anonymous], P 42 EL COMP TECHN C
[2] Han B., 1997, P SURF MOUNT INT ADV, P43
[3] Structural investigations of gold-to-gold wafer bonding interfaces
Kim, HW
Kim, NH
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 110 (01): : 64 - 67
[4] SILICON-TO-SILICON DIRECT BONDING METHOD
SHIMBO, M
FURUKAWA, K
FUKUDA, K
TANZAWA, K
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2987 - 2989
[5] STRUCTURE OF AL-AL AND AL-SI3N4 INTERFACES BONDED AT ROOM-TEMPERATURE BY MEANS OF THE SURFACE ACTIVATION METHOD
SUGA, T
TAKAHASHI, Y
TAKAGI, H
GIBBESCH, B
ELSSNER, G
[J]. ACTA METALLURGICA ET MATERIALIA, 1992, 40 (SUPPL): : S133 - S137
[6] Suga T., 2006, ECS Trans., V3, P155
[7] Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
Takagi, H
Maeda, R
Chung, TR
Suga, T
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1998, 70 (1-2) : 164 - 170
[8] Surface activated bonding of silicon wafers at room temperature
Takagi, H
Kikuchi, K
Maeda, R
Chung, TR
Suga, T
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2222 - 2224
[9] Effect of surface roughness on room-temperature wafer bonding by Ar beam surface activation
Takagi, H
Maeda, R
Chung, TR
Hosoda, N
Suga, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (07): : 4197 - 4203
[10] Tong Q.Y., 1999, Semiconductor Wafer Bonding, P103

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