0.1-μm GaAs PHEMT W-Band Low Noise Amplifier MMIC using Coplanar Waveguide Technology

被引：0
|
作者：
Bessemoulin, Alex [1 ]
Tarazi, Labra [1 ]
McCulloch, MacCrae G. [1 ]
Mahon, Simon L. [1 ]
机构：
[1] Macom, Level 11,157 Walker St, Sydney, NSW 2060, Australia
来源：
2014 1ST AUSTRALIAN MICROWAVE SYMPOSIUM (AMS) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the performance of a first pass design W-band low noise amplifier MMIC, based on coplanar waveguide (CPW) technology, and utilising 100-nm gate-length GaAs pseudomorphic power HEMTs. With a chip size of less than 1.4 mm(2), this two-stage LNA achieves an average small signal gain of 12 dB between 80 and 100 GHz. The measured noise figure averages 5 dB up to 94 GHz. To the author knowledge, this performance is one of the very few reported for W-band LNAs fabricated in commercially available foundry process. It is also comparable to the best results reported with more advanced InP or Metamorphic HEMT low noise technologies.
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页码：1 / 2
页数：2
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