Dependence of absorption coefficient and acid generation efficiency on acid generator concentration in chemically amplified resist for extreme ultraviolet lithography

被引：98
作者：
Hirose, Ryo
Kozawa, Takahiro
Tagawa, Seiichi
Kai, Toshiyuki
Shimokawa, Tsutomu
机构：
[1] Osaka Univ, Inst Sci Ind Res, Osaka 5670047, Japan
[2] JSR Corp, Yokaichi, Mie 5108552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 36-40期
关键词：
EUV lithography; chemically amplified resist; acid generation efficiency; absorption coefficient; acid generator concentration;
D O I：
10.1143/JJAP.46.L979
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The absorption coefficient and acid generation efficiency are elemental key factors for the design of chemically amplified resist because the acid distribution in resist films is primarily determined by these two factors. In this study, the number of acid molecules generated in a model system of chemically amplified extreme ultraviolet (EUV) resists [poly (4-hydroxystyrene) film dispersed with triphenylsulfonium-triflate (TPS-tf)] was evaluated using an acid sensitive dye. The absorption coefficient and acid generation efficiency were evaluated by changing film thickness. The acid generation efficiency was 1.7 (5 wt % TPS -tf), 2.5 (10 wt % TPS-tf), and 3.1 per photon (20 wt % TPS-tf), respectively. The absorption coefficient of the model film was 3.8 +/- 0.2 mu m(-1). The effect of acid generator concentration on the absorption coefficient of resist films was negligible within the concentration range of 0-20 wt %.
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收藏
页码：L979 / L981
页数：3
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