On the uniqueness of non-Ohmic current profile inferred from surface voltage relaxation

被引：1
作者：
Litwin, C [1 ]
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
来源：
PHYSICS LETTERS A | 1996年 / 213卷 / 3-4期
关键词：
D O I：
10.1016/0375-9601(96)00094-1
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A method of deducing a noninductive current drive profile from surface voltage evolution is discussed. It is shown that, within the confines of the model, the inferred profile is unique.
引用
收藏
页码：183 / 185
页数：3
相关论文
共 50 条
  • [21] The current-voltage measurements under flat-top pulsed magnetic fields for non-ohmic transport study
    Wei, Wenqi
    Yang, Ming
    Jin, Shimin
    Zhu, Haipeng
    Wang, Junfeng
    Han, Xiaotao
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2022, 93 (08)
  • [22] Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes
    Bushmaker, Adam W.
    Deshpande, Vikram V.
    Hsieh, Scott
    Bockrath, Marc W.
    Cronin, Stephen B.
    NANO LETTERS, 2009, 9 (08) : 2862 - 2866
  • [23] TEMPERATURE-DEPENDENCE OF NON-OHMIC CURRENT AND SWITCHING CHARACTERISTICS OF A CHALCOGENIDE GLASS
    THOMAS, CB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (18) : 2587 - 2596
  • [24] Current generated periodic space charge in semiconductor diodes with non-ohmic injection
    1600, (75):
  • [25] Breakdown phenomenon in non-ohmic current-voltage characteristics of a zinc oxide-bismuth oxide binary varistor system
    Atsumi, Taro
    Mikami, Tsukino
    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, 2021, 68 (07): : 257 - 261
  • [26] Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to P-Type Layer
    Ohtsuka, K.
    Tarui, Y.
    Watanabe, T.
    Fujihira, K.
    Matsuno, Y.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1035 - 1038
  • [27] Analysis of non-ohmic electrical current-voltage characteristic of membranes carrying a single track-etched conical pore
    Woermann, D
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 194 (04) : 458 - 462
  • [28] 2ND CURRENT SATURATION OF NON-OHMIC BEHAVIOR IN CDS SINGLE CRYSTALS
    UCHIDA, I
    ISHIGURO, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) : 935 - &
  • [29] NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES
    HESS, K
    NEUGROSCHEL, A
    SHIUE, CC
    SAH, CT
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1721 - 1727
  • [30] Non-Ohmic hopping transport in a-YSi:: From isotropic to directed percolation
    Ladieu, F
    L'Hôte, D
    Tourbot, R
    PHYSICAL REVIEW B, 2000, 61 (12): : 8108 - 8118
12345