On the uniqueness of non-Ohmic current profile inferred from surface voltage relaxation

被引:1
作者
Litwin, C [1 ]
机构
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
关键词
D O I
10.1016/0375-9601(96)00094-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A method of deducing a noninductive current drive profile from surface voltage evolution is discussed. It is shown that, within the confines of the model, the inferred profile is unique.
引用
收藏
页码:183 / 185
页数:3
相关论文
共 50 条
[21]   Gate Voltage Controllable Non-Equilibrium and Non-Ohmic Behavior in Suspended Carbon Nanotubes [J].
Bushmaker, Adam W. ;
Deshpande, Vikram V. ;
Hsieh, Scott ;
Bockrath, Marc W. ;
Cronin, Stephen B. .
NANO LETTERS, 2009, 9 (08) :2862-2866
[22]   The current-voltage measurements under flat-top pulsed magnetic fields for non-ohmic transport study [J].
Wei, Wenqi ;
Yang, Ming ;
Jin, Shimin ;
Zhu, Haipeng ;
Wang, Junfeng ;
Han, Xiaotao .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2022, 93 (08)
[23]   TEMPERATURE-DEPENDENCE OF NON-OHMIC CURRENT AND SWITCHING CHARACTERISTICS OF A CHALCOGENIDE GLASS [J].
THOMAS, CB .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (18) :2587-2596
[25]   Breakdown phenomenon in non-ohmic current-voltage characteristics of a zinc oxide-bismuth oxide binary varistor system [J].
Atsumi, Taro ;
Mikami, Tsukino .
Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, 2021, 68 (07) :257-261
[26]   Numerical Evaluation of Forward Voltage in SiC Pin Diode with Non-Ohmic Current Component in Contact to P-Type Layer [J].
Ohtsuka, K. ;
Tarui, Y. ;
Watanabe, T. ;
Fujihira, K. ;
Matsuno, Y. .
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1035-1038
[27]   Analysis of non-ohmic electrical current-voltage characteristic of membranes carrying a single track-etched conical pore [J].
Woermann, D .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 194 (04) :458-462
[28]   2ND CURRENT SATURATION OF NON-OHMIC BEHAVIOR IN CDS SINGLE CRYSTALS [J].
UCHIDA, I ;
ISHIGURO, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :935-&
[29]   NON-OHMIC ELECTRON CONDUCTION IN SILICON SURFACE INVERSION LAYERS AT LOW-TEMPERATURES [J].
HESS, K ;
NEUGROSCHEL, A ;
SHIUE, CC ;
SAH, CT .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1721-1727
[30]   Non-Ohmic hopping transport in a-YSi:: From isotropic to directed percolation [J].
Ladieu, F ;
L'Hôte, D ;
Tourbot, R .
PHYSICAL REVIEW B, 2000, 61 (12) :8108-8118