Characterizing large-scale glaciotectonic sediment deformation using electrical resistivity methods

被引:4
作者
Aylsworth, R. L., Jr. [1 ,2 ]
Van Dam, R. L. [1 ,3 ]
Larson, G. J. [1 ]
Jessee, M. A. [1 ,4 ]
机构
[1] Michigan State Univ, Dept Geol Sci, 206 Nat Sci Bldg, E Lansing, MI 48824 USA
[2] Ingrain Inc, 3733 Westheimer Rd,2nd Floor, Houston, TX 77027 USA
[3] Queensland Univ Technol, Inst Future Environm, Gardens Point Campus,2 George St, Brisbane, Qld 4000, Australia
[4] Indiana Univ, Dept Geol Sci, 1001 East 10th St, Bloomington, IN 47405 USA
关键词
sediment deformation; glacioteconism; electrical resistivity; subsurface characterization; diapirs; coastal bluff; GROUND-PENETRATING RADAR; LAURENTIDE ICE-SHEET; PUSH-MORAINE; END-MORAINE; STRATIGRAPHY; SVALBARD; CANADA; ARCHITECTURE; INVERSION; GLACIER;
D O I
10.1088/1742-2132/13/2/S39
中图分类号
P3 [地球物理学]; P59 [地球化学];
学科分类号
0708 ; 070902 ;
摘要
Large-scale sediment deformation structures formed by glaciotectonic processes have been identified south of Ludington, USA. Here, several apparent clay diapirs rise from below beach level to near the top of an approximately 60 m high bluff along the eastern shore of Lake Michigan. Throughout the area, the surface topography and locations of springs indicate a complicated subsurface structure and a preferred pattern of groundwater drainage. Since public borehole information is sparse, it is not known whether the structures exposed in the bluff are true diapirs or ridges, and if the latter, what is their orientation. In this paper we present the results of field, laboratory, and modeling studies to characterize the inland extent and orientation of these deformation structures using galvanic-source electrical geophysical methods. We exploit the large electrical contrast between a sandy sedimentary layer and an underlying clayey silt sedimentary layer in which the deformation occurred. Constant-spread traverses and multi-electrode tomographic data demonstrate that at least one of the narrow structures extends a significant distance inland.
引用
收藏
页码:S39 / S49
页数:11
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