Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2

被引：2

作者：

Matsushita, T ^{[1
]}

Sakai, W

Nakajima, K

Suzuki, M

Kimura, K

Agarwal, A

Gossmann, HJ

Ameen, M

机构：

[1] Kyoto Univ, Dept Engn Phys & Mech, Kyoto 6068501, Japan

[2] Axcelis Technol Inc, Beverly, MA 01915 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2005年 / 230卷

关键词：

ion implantation; strained Si; radiation damage; two beam analysis;

D O I：

10.1016/j.nimb.2004.12.046

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

;The damage distributions induced by ultra low energy ion implantation (5 keV Si+) in both strained-Si/Sio(0.8)Ge(0.2) and normal Si are measured using high-resolution RBS/channeling with a depth resolution better than 1 nm. Ion implantation was performed at room temperature over the fluence range from 2 x 10(13) to 1 X 10(15) ions/cm(2). Our HRBS results show that the radiation damage induced in the strained Si is slightly larger than that in the normal Si at fluences from 1 X 10(14) to 4 x 10(14) ions/cm(2) while the amorphous width is almost the same in both strained and normal Si. (c) 2005 Published by Elsevier B.V.

引用

页码：230 / 233

页数：4

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