Pulsed laser deposition of tin oxide thin films for field emission

被引:70
作者
Jadhav, H. [1 ]
Suryawanshi, S. [2 ]
More, M. A. [2 ]
Sinha, S. [1 ]
机构
[1] Bhabha Atom Res Ctr, Laser & Plasma Surface Proc Sect, Bombay 400085, Maharashtra, India
[2] Univ Pune, Dept Phys, Pune 411007, Maharashtra, India
关键词
Field emission; Pulsed laser deposition; Tin oxide thin films; SNO2; SURFACE; TEMPERATURE; OXIDATION; GROWTH;
D O I
10.1016/j.apsusc.2017.05.020
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A comparative study of Pulsed Laser Deposition (PLD) based Tin Oxide (SnO2) thin films deposited at various substrate deposition temperature (Ts) has been performed. Surface morphology of the films was studied by Field Emission Scanning Electron Microscopy (FESEM) and surface composition of the films by X-ray PhotoelectronSpectroscopy (XPS) technique. X-ray diffraction (XRD) technique has been used to investigate crystalline nature of the deposited films. Field Emission (FE) properties of the SnO2 films were measured and a significantly low turn on field (2.1 V/mu m) (field necessary to draw an emission current density of 10 mu A/cm(2)) for films deposited at high substrate temperature (700 degrees C) was observed. Field enhancement factor estimated from FE studies was found to strongly depend on the surface morphology of the films. Overall good field emission current stability was observed for all SnO2 films. Dependence of FE properties on surface morphology, surface composition and deposition environment has been observed and analyzed systematically. Significantly low turn on field with high emission current density and field enhancement factor exhibited by films deposited when substrate was maintained at 700 degrees C has been mainly correlated to surface morphology and surface composition. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:764 / 769
页数:6
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