Characterization of CuInTe2 grown by the tellurization of Cu and In in liquid phase

Single crystals of CuInT theta(2) were grown by a new technique that involved the tellurization of Cu and In in liquid phase. Samples obtained from the ingots grown at tellurization temperature T-t around 70% of the melting point of CuInTe2 had their stoichiometry, relatively close to 1:1:2. Acceptor levels between 2 and 25 meV were determined from the analysis of the temperature dependence of the hole concentration. From the knowledge of molecularity and valence stoichiometry of each sample, it is established that the dominant shallow acceptor with E-A(0) approximate to 30 meV is due to V-In. The density of states effective mass of the hole is found to be (0.78+/-0.02)m(e).