Study of structural, dielectric and electrical conduction behaviour of Gd substituted CaCu3Ti4O12 ceramics

被引:74
作者
Kashyap, Raman [1 ]
Thakur, O. P. [2 ]
Tandon, R. P. [1 ]
机构
[1] Univ Delhi, Dept Phys & Astrophys, Delhi 110007, India
[2] Solid State Phys Lab, Electroceram Grp, Delhi 110054, India
关键词
Powders: solid state reaction method; Grain boundaries; Dielectric properties; Electrical conductivity; PROCESSING CONDITIONS; CONSTANT;
D O I
10.1016/j.ceramint.2011.11.085
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Effect of Gd on microstructural, dielectric and electrical properties has been studied over wide temperature (300-500 K) and frequency range (100 Hz-1 MHz). Gd substitution in CCTO system results in decrease in the grain size and increase of Schottky potential barrier which causes lower value of dielectric constant. The dielectric constant remains nearly constant in temperature range 300-350 K. Doped samples show lower dielectric loss in middle frequency range (similar to 10 kHz-1 MHz) at room temperature. The AC conductivity (sigma(ac)) obeys a power law, sigma(ac) = Af(n), where n is temperature dependent frequency exponent. The AC conductivity behaviour can be divided into three regions depending on conduction processes and the relevant charge transport mechanisms have been discussed. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:3029 / 3037
页数:9
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