Electronic properties of grain boundaries in Cu(In,Ga)Se2 thin films with various Ga-contents

被引：21

作者：

Baier, Robert ^{[1
]}

Lehmann, Jascha ^{[1
]}

Lehmann, Sebastian ^{[1
,2
]}

Rissom, Thorsten ^{[1
]}

Kaufmann, Christian Alexander ^{[1
]}

Schwarzmann, Alex ^{[3
]}

Rosenwaks, Yossi ^{[3
]}

Lux-Steiner, Martha Ch. ^{[1
]}

Sadewasser, Sascha ^{[1
,4
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14109 Berlin, Germany

[2] Lund Univ, S-22100 Lund, Sweden

[3] Tel Aviv Univ, Sch Elect Engn, Dept Phys Elect, IL-69978 Tel Aviv, Israel

[4] Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 103卷

关键词：

CIGSe; Grain boundaries; KPFM; MICROSCOPY;

D O I：

10.1016/j.solmat.2012.04.002

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present a study on the electronic properties of grain boundaries (GBs) in polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin films by means of Kelvin probe force microscopy. As grown as well as KCN-treated films were investigated comparatively. No influence of the chemical treatment on the electronic properties of GBs was found. GBs generally exhibited large variations in their electronic properties. By means of a novel method of data analysis both potential barriers for holes and electrons were found at GBs, in a range from -118 mV to +114 mV, as well as GBs without potential barrier. No dependence of the electronic GB-properties on the Ga-content was detected. Consequently, we conclude that there is no correlation between the electronic properties of GBs and the obtained maximum efficiencies of CIGSe thin film solar cells as a function of the Ga-content. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：86 / 92

页数：7

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