Crystal growth and characterization of lanthanum substituted bismuth titanate single crystals

被引：13

作者：

Aoyagi, R ^{[1
]}

Takeda, H ^{[1
]}

Okamura, S ^{[1
]}

Shiosaki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, NAIST, Nara 6300101, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9B期

关键词：

single crystal; flux growth; Bi4-xLaXTi3O12; segregation; ferroelectric;

D O I：

10.1143/JJAP.40.5671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermostability of lanthanum substituted bismuth titanate, Bi4-xLaxTi3O12 (BLT), with La-content up to x = 0.75 was investigated using differential thermal analysis. Subsequently, BLT and Bi4Ti3O12 (BIT) single crystals were grown by a self-flux method. The BLT crystals with two different ranges of La content, x = 1.0-1.5 and 0 < x < 0.1, were obtained using starting materials with mole ratio BLT(x = 0.25) : Bi2O3 = 1 : 9. Segregation phenomena of La during crystal growth process were observed. A comparison of dielectric and ferroelectric properties in BIT and BLT crystals was performed. The La incorporation led to a significant increase in the coercive field value, E-c, of BIT single crystals.

引用

页码：5671 / 5674

页数：4

共 16 条

[1]

AURIVILLIUS B, 1949, ARK KEMI, V0001

[2]

CUMMINS SE, 1968, J APPL PHYS, V39, P15

[3] CRYSTAL-STRUCTURE OF BI4TI3O12 [J].