Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

被引：23

作者：

Xiao, Y. G. ^{[1
]}

Tang, M. H. ^{[1
]}

Xiong, Y. ^{[2
]}

Li, J. C. ^{[3
]}

Cheng, C. P. ^{[1
]}

Jiang, B. ^{[1
]}

Cai, H. Q. ^{[1
]}

Tang, Z. H. ^{[1
]}

Lv, X. S. ^{[1
]}

Gu, X. C. ^{[3
]}

Zhou, Y. C. ^{[1
]}

机构：

[1] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China

[2] Xiangtan Univ, Sch Math & Computat Sci, Xiangtan 411105, Hunan, Peoples R China

[3] Natl Univ Def Technol, Sch Elect Sci & Engn, ASIC R&D Ctr, Changsha 410073, Hunan, Peoples R China

来源：

CURRENT APPLIED PHYSICS | 2012年 / 12卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Metal-ferroelectric-insulator-semiconductor (MFIS); Negative capacitance; Up-converted; Subthreshold swing; RECENT PROGRESS; MODEL;

D O I：

10.1016/j.cap.2012.05.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted semiconductor surface potential and low subthreshold swing S = 34 (<60 mV/dec) can be realized with appropriate thicknesses of ferroelectric thin film and insulator layer at room temperature. What's more, a reduction gate voltage about 260 mV can be reached if the ON-state current is fixed to 600 mu A/mu m. It is expected that the derived results can offer useful guidelines for the application of low power dissipation in ongoing scaling of FETs. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1591 / 1595

页数：5

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