DC and transient performance of 4H-SiC double-implant MOSFETs

被引：12
|
作者：
Losee, Pete A. [1 ]
Matocha, Kevin [1 ]
Arthur, Stephen D. [1 ]
Nasadoski, Jeffrey [1 ]
Stum, Zachary [2 ,3 ]
Garrett, Jerome L. [1 ]
Schutten, Michael [4 ]
Dunne, Greg [1 ]
Stevanovic, Ljubisa
机构：
[1] GE Global Res, Semicond Technol Lab, Niskayuna, NY 12309 USA
[2] GE Global Res, Micro & Nano Proc Dev Lab, Niskayuna, NY 12309 USA
[3] Rensselaer Polytech Inst, Troy, NY 12180 USA
[4] GE Global Res, Elect Power Convers Lab, Niskayuna, NY 12309 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期
关键词：
body diode; DMOSFET; inductive switching; SiC MOSFET;
D O I：
10.1109/TED.2008.926592
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around I kV and specific on-resistances as low as Rsp,ON = 8.3 mQ - cm'. DC and transient characteristics are shown. Room and elevated temperature (up to 200 'Q 60OV/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.
引用
收藏
页码：1824 / 1829
页数：6
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