DC and transient performance of 4H-SiC double-implant MOSFETs

被引：12

作者：

Losee, Pete A. ^{[1
]}

Matocha, Kevin ^{[1
]}

Arthur, Stephen D. ^{[1
]}

Nasadoski, Jeffrey ^{[1
]}

Stum, Zachary ^{[2
,3
]}

Garrett, Jerome L. ^{[1
]}

Schutten, Michael ^{[4
]}

Dunne, Greg ^{[1
]}

Stevanovic, Ljubisa

机构：

[1] GE Global Res, Semicond Technol Lab, Niskayuna, NY 12309 USA

[2] GE Global Res, Micro & Nano Proc Dev Lab, Niskayuna, NY 12309 USA

[3] Rensselaer Polytech Inst, Troy, NY 12180 USA

[4] GE Global Res, Elect Power Convers Lab, Niskayuna, NY 12309 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

body diode; DMOSFET; inductive switching; SiC MOSFET;

D O I：

10.1109/TED.2008.926592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around I kV and specific on-resistances as low as Rsp,ON = 8.3 mQ - cm'. DC and transient characteristics are shown. Room and elevated temperature (up to 200 'Q 60OV/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.

引用

页码：1824 / 1829

页数：6

共 13 条

[1]

Baliga B. J., 1996, POWER SEMICONDUCTOR

[2]

Harada S, 2006, INT SYM POW SEMICOND, P125

[3] 4.3 mΩcm2, 1100 V4H-SiC implantation and epitaxial MOSFET [J].

Harada, Shinsuke ;

Kato, Makoto ;

Okamoto, Mitsuo ;

Yatsuo, Tsutomu ;

Fukuda, Kenji ;

Arai, Kazuo .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :1281-1284

[4] Time-dependent dielectric breakdown of 4H-SiC MOS capacitors and DMOSFETs [J].

Matocha, Kevin ;

Dunne, Greg ;

Soloviev, Stanislav ;

Beaupre, Richard .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) :1830-1834

[5] Low output capacitance 1500V 4H-SiC MOSFETs with 8 mΩ•cm2 specific on-resistance [J].

Matocha, Kevin ;

Tucker, Jesse ;

Arthur, Steve ;

Schutten, Michael ;

Nasadoski, Jeff ;

Glaser, John ;

Stevanovic, Ljubisa .

SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 :819-+

[6]

Miura N., 2006, P INT S POW SEM DEV, P1, DOI DOI 10.1109/ISPSD.2006.1666121

[7]

Nickeleit V, 2004, CURR DIAG PATHOL, V10, P11

[8]

Ryu SH, 2006, MATER RES SOC SYMP P, V911, P391

[9] Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs [J].

Ryu, Sei-Hyung ;

Krishnaswami, Sumi ;

Hull, Brett ;

Heath, Bradley ;

Das, Mrinal ;

Richmond, James ;

Agarwal, Anant ;

Palmour, John ;

Scofield, James .

SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 :1261-1264

[10]

Ryu SH, 2005, INT SYM POW SEMICOND, P275

← 1 2 →