Nucleation and growth mechanism of a nanosheet-structured NiCoSe2 layer prepared by electrodeposition

被引:14
作者
Feng, Zhongbao [1 ,2 ]
Wang, Lin [1 ]
Li, Dagang [1 ]
Gao, Shuaibo [1 ]
Sun, Qiang [1 ]
Lu, Pai [1 ]
Xing, Pengfei [1 ]
An, Maozhong [3 ]
机构
[1] Northeastern Univ, Sch Met, Shenyang 110819, Liaoning, Peoples R China
[2] Changzhou Univ, Jiangsu Prov Cultivat Base State Key Lab Photovol, Changzhou 213164, Jiangsu, Peoples R China
[3] Harbin Inst Technol, State Key Lab Urban Water Resource & Environm, Sch Chem & Chem Engn, Harbin 150001, Heilongjiang, Peoples R China
基金
中国博士后科学基金;
关键词
electrodeposition; Ni-Co-Se; nanosheet; nucleation mechanism; temperature; SELENIDE THIN-FILMS; ELECTROCHEMICAL BEHAVIORS; NI; ALLOYS; WATER; ELECTROCATALYST; BATH;
D O I
10.1088/1361-6528/ab0a2d
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ni-Co-Se layers have attracted a great deal of attention in the field of solar cells, electrocatalyst water splitting and supercapacitors. Electrodeposition is a simple, convenient and low-cost way to obtain Ni-Co-Se layers. However, until now, the electrochemical kinetics of the Ni-Co-Se system, including its growth and nucleation mechanisms, are still unclear. In present work a NiCoSe2 layer with a nanosheet structure was electrodeposited in a chloride bath. The electrochemical mechanisms of the Ni-Co-Se system were also studied. It is noted that the electrochemical kinetics of Ni-Co-Se electrodeposition can be influenced by both temperature and electrode material; however, temperature does not change the progressive nucleation process and mixed controlled growth mechanism of Ni-Co-Se. The diffusion coefficient D and charge-transfer coefficient alpha of the Ni-Co-Se system were calculated. The values of D obtained by cyclic voltammogram and chromoamperometry are close to each other at both 20 and 50 degrees C, respectively, and increase with the increase of temperature. Moreover, the activation energy E-a was also calculated. Specially, a uniform 3D network-structure NiCoSe2 layer was electrodeposited on ITO glass at -0.9 V and 40 similar to 60 degrees C. The increased overpotential during deposition makes the NiCoSe2 layer more easily gather together; however, there is no significant effect on the surface morphology of the NiCoSe2 layer when the temperature is between 40 and 60 degrees C.
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页数:10
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