Band gap tuning in nanocomposite ZrO2-SnO2 thin film achieved through sol-gel co-deposition method

被引：15

作者：

Joy, K. ^{[1
]}

Lakshmy, S. S. ^{[1
]}

Thomas, P. V. ^{[1
]}

机构：

[1] Mar Ivanios Coll, Thin Film Lab, Post Grad & Res Dept Phys, Thiruvananthapuram 695015, Kerala, India

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 2012年 / 61卷 / 01期

关键词：

Sol-gel processes; Co-deposition; Optical properties; X-ray diffraction; X-ray photoelectron spectroscopy; Scanning electron microscopy; Luminescence; STRUCTURAL-PROPERTIES; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; ZIRCONIA; MORPHOLOGY; STRESS; ZRO2;

D O I：

10.1007/s10971-011-2608-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transparent SnO2, nanocomposite ZrO2-SnO2 and ZrO2 thin films were prepared by sol-gel dip-coating technique. X-ray diffraction (XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. X-ray photoelectron spectroscopy (XPS) gave Zr 3d, Sn 3d and O 1s spectra of the nanocomposite ZrO2-SnO2 thin film which revealed the presence of oxygen vacancies in the nanocomposite ZrO2-SnO2 thin film. Scanning electron microscopy (SEM) observations showed that microstructure of the nanocomposite ZrO2-SnO2 thin film consists of uniform dispersion of isolated SnO2 particles in ZrO2 matrix. The band gap for the ZrO2 was estimated to be 5.51 eV and that for the nanocomposite ZrO2-SnO2 film was 4.9 eV. These films demonstrated the tailoring of band gap values which can be directly employed in tuning the band gap by simply changing the relative concentration of zirconium and tin elements. Photoluminescence (PL) spectra revealed an intense emission peak at 424 nm in the nanocomposite ZrO2-SnO2 film which indicate the presence of oxygen vacancies in ZrSnO4.

引用

页码：179 / 184

页数：6

共 32 条

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