Deformation of silicon nanowires studied by molecular dynamics simulations

被引：25
作者：
Guenole, Julien [1 ]
Godet, Julien [1 ]
Brochard, Sandrine [1 ]
机构：
[1] Univ Poitiers, UPR CNRS 3346, ENSMA, Inst Pprime,Dept Phys & Mecan Mat,SP2MI, F-86962 Futuroscope, France
来源：
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING | 2011年 / 19卷 / 07期
关键词：
FIELD-EFFECT TRANSISTORS; SURFACE STEP; DISLOCATION NUCLEATION; MECHANICAL-PROPERTIES; INCIPIENT PLASTICITY; CRYSTAL PLASTICITY; ELASTIC LIMIT; TEMPERATURE; COMPUTER; STRENGTH;
D O I：
10.1088/0965-0393/19/7/074003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of various parameters such as temperature or surface state on the very first stages of plasticity in semiconductor nanowires has been investigated by molecular dynamics simulations. In particular, the role of edge and surface reconstructions has been analyzed and discussed in detail. To this end, square nanowires with the [0 0 1] and [1 2 3] axis and various side surfaces have been considered. In general, the onset of plasticity appears from the NW edges at very high stresses. However, when surface reconstructions make surface steps at the intersection of the slip plane and the NW surface, the step can favor the dislocation nucleation from surfaces. This study raises the role of the detailed geometry of the surfaces and edges on the onset of plasticity in nanostructures.
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页数：15
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