Properties of high-porosity sol-gel derived indium-tin oxide films

被引：0

作者：

Stoica, TF

Gartner, M

Stoica, T

Losurdo, M

Teodorescu, VS

Blanchin, MG

Zaharescu, M

机构：

[1] Natl Inst Mat Phys, Bucharest 77125, Romania

[2] Romanian Acad Sci, Inst Phys Chem, Bucharest 77208, Romania

[3] CNR, Plasma Chem Res Ctr, I-70126 Bari, Italy

[4] Univ Lyon 1, Lab Phys Mat Condensee & Nanostruct, F-69622 Villeurbanne, France

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 05期

关键词：

sol-gel method; indium-tin oxide; thin films;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium-tin oxide (ITO) sol-gel films have been obtained with the void concentration up to 50%. The films are nanostructured with nanocrystals of In2O3:Sn and nanovoids. The information obtained from derivative thermo-gravimetry was used to design the annealing program for ITO film formation with a high void concentration. Multilayer films were obtained by successive deposition. The thickness of one layer was about 9 nm. By successive depositions, the void density of the film is reduced. Quantitative analysis of the void density has been performed by spectroscopic ellipsometry. The conductivity of the films can be varied in a large range by annealing in vacuum or in air, at temperature higher than 200 degrees C.

引用

页码：2353 / 2358

页数：6

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