Growth of anodic oxide films on oxygen-containing niobium

被引：23

作者：

Habazaki, H ^{[1
]}

Ogasawara, T

Konno, H

Shimizu, K

Asami, K

Saito, K

Nagata, S

Skeldon, P

Thompson, GE

机构：

[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan

[2] Keio Univ, Univ Chem Lab, Yokohama, Kanagawa 2238522, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Univ Manchester, Sch Mat, Ctr Corros & Protect, Manchester M60 1QD, Lancs, England

来源：

ELECTROCHIMICA ACTA | 2005年 / 50卷 / 27期

基金：

英国工程与自然科学研究理事会;

关键词：

anodic niobia; ionic transport; Nb-O solid solution; amorphous oxide;

D O I：

10.1016/j.electacta.2005.03.011

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The present study is directed at understanding of the influence of oxygen in the metal on anodic film growth on niobium, using sputter-deposited niobium containing from about 0-52 at.% oxygen, with anodizing carried out at high efficiency in phosphoric acid electrolyte. The findings reveal amorphous anodic niobia films, with no significant effect of oxygen on the field strength, transport numbers, mobility of impurity species and capacitance. However, since niobium is partially oxidized due to presence of oxygen in the substrate, less charge is required to form the films, hence reducing the time to reach a particular film thickness and anodizing voltage. Further, the relative thickness of film material formed at the metal/film interface is increased by the incorporation of oxygen species into the films from the substrate, with an associated altered depth of incorporation of phosphorus species into the films. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：5334 / 5339

页数：6

共 19 条

[1] ELECTRON-BEAM CRYSTALLIZATION OF ANODIC OXIDE FILMS [J].

ALADJEM, A ;

BRANDON, DG ;

YAHALOM, J ;

ZAHAVI, J .

ELECTROCHIMICA ACTA, 1970, 15 (05) :663-&

[2] STRUCTURE AND STOICHIOMETRY OF ANODIC FILMS ON V, NB, TA, MO AND W [J].

ARORA, MR ;

KELLY, R .

JOURNAL OF MATERIALS SCIENCE, 1977, 12 (08) :1673-1684

[3] ALGORITHMS FOR THE RAPID SIMULATION OF RUTHERFORD BACKSCATTERING SPECTRA [J].

DOOLITTLE, LR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 9 (03) :344-351

[4] DIELECTRIC-PROPERTIES OF ANODIC OXIDE-FILMS ON TANTALUM [J].

KERREC, O ;

DEVILLIERS, D ;

GROULT, H ;

CHEMLA, M .

ELECTROCHIMICA ACTA, 1995, 40 (06) :719-724

[5] A photoelectrochemical and ac impedance study of anodic titanium oxide films [J].

Marsh, J ;

Gorse, D .

ELECTROCHIMICA ACTA, 1998, 43 (07) :659-670

[6] ON THE OXIDATION OF SILICON [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02) :117-129

[7]

Ono S, 2004, ELEC SOC S, V2003, P133

[8] Effect of dissolved oxygen on thermal oxidation in Ta2O5/Ta sandwiches [J].

Pozdeev-Freeman, Y ;

Gladkikh, A ;

Karpovski, M ;

Palevski, A .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (09) :1034-1037

[9] Critical oxygen content in porous anodes of solid tantalum capacitors [J].

Pozdeev-Freeman, Y ;

Rozenberg, Y ;

Gladkikh, A ;

Karpovski, M ;

Palevski, A .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1998, 9 (04) :309-311

[10] Effect of thermal oxide on the crystallization of the anodic Ta2O5 film [J].

Pozdeev-Freeman, Y ;

Gladkikh, A .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (08) :931-936

← 1 2 →