Fluctuation controlled hopping of bound magnetic polarons in ErAs:GaAs nanocomposites

被引：47
作者：
Schmidt, DR [1 ]
Petukhov, AG
Foygel, M
Ibbetson, JP
Allen, SJ
机构：
[1] Univ Calif Santa Barbara, Dept Phys, Santa Barbara, CA 93106 USA
[2] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD 57701 USA
[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 04期
关键词：
D O I：
10.1103/PhysRevLett.82.823
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Transport in ErAs:GaAs nanocomposites occurs via hopping of bound magnetic polarons between nanoparticles of magnetic semimetallic ErAs. A strong negative magnetoresistance, up to 3 orders of magnitude and strongly dependent upon ErAs particle size, is accompanied by a low field positive magnetoresistance. A model that features fluctuation controlled hopping captures this behavior.
引用
收藏
页码：823 / 826
页数：4
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