Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopy

被引：3

作者：

Pfister, M ^{[1
]}

Johnson, MB ^{[1
]}

Alvarado, SF ^{[1
]}

Salemink, HWM ^{[1
]}

Marti, U ^{[1
]}

Martin, D ^{[1
]}

MorierGenoud, F ^{[1
]}

Reinhart, FK ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE, INST MICRO & OPTOELECT, CH-1015 LAUSANNE, SWITZERLAND

来源：

APPLIED SURFACE SCIENCE | 1996年 / 104卷

关键词：

D O I：

10.1016/S0169-4332(96)00196-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Investigating the ternary InxGa1-xAs alloy (x similar to 12%) by cross-sectional scanning tunneling microscopy, we find that on the UHV-cleaved (110) surface the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty- and filled-state images, respectively. This is found to be mostly a geometric effect due to the larger size of the In. We apply this method to study the incorporation of In during the growth of In0.12Ga0.88As quantum wires on nonplanar substrates, Strong In segregation in the growth direction is seen in the structure, and we compare the incorporation profiles across the quantum wire and a planar quantum well. No In clustering beyond the statistical expectation is observed.

引用

页码：516 / 521

页数：6

共 14 条

[1] TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES
ALBREKTSEN, O
ARENT, DJ
MEIER, HP
SALEMINK, HWM
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (01) : 31 - 33
[2] DIRECT DETERMINATION OF III-V SEMICONDUCTOR SURFACE BAND-GAPS
CARSTENSEN, H
CLAESSEN, R
MANZKE, R
SKIBOWSKI, M
[J]. PHYSICAL REVIEW B, 1990, 41 (14): : 9880 - 9885
[3] STRUCTURAL CHEMISTRY OF THE CLEAVAGE FACES OF COMPOUND SEMICONDUCTORS
DUKE, CB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 732 - 735
[4] ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE
FEENSTRA, RM
STROSCIO, JA
TERSOFF, J
FEIN, AP
[J]. PHYSICAL REVIEW LETTERS, 1987, 58 (12) : 1192 - 1195
[5] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS
FEENSTRA, RM
[J]. PHYSICAL REVIEW B, 1994, 50 (07): : 4561 - 4570
[6] CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY OF ILL-V SEMICONDUCTOR STRUCTURES
FEENSTRA, RM
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2157 - 2168
[7] DIRECT IMAGING OF DOPANTS IN GAAS WITH CROSS-SECTIONAL SCANNING-TUNNELING-MICROSCOPY
JOHNSON, MB
ALBREKTSEN, O
FEENSTRA, RM
SALEMINK, HWM
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (21) : 2923 - 2925
[8] Kapon E., 1993, Optoelectronics - Devices and Technologies, V8, P429
[9] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110)
LUBINSKY, AR
DUKE, CB
LEE, BW
MARK, P
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (17) : 1058 - 1061
[10] FABRICATION OF BURIED GAALAS NM-STRUCTURES BY DEEP UV HOLOGRAPHIC LITHOGRAPHY AND MBE GROWTH ON FINELY CHANNELED SUBSTRATES
MARTI, U
PROCTOR, M
MARTIN, D
MORIERGENOUD, F
SENIOR, B
REINHART, FK
[J]. MICROELECTRONIC ENGINEERING, 1991, 13 (1-4) : 391 - 394

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