Band alignment of SiO2/(AlxGa1-x)2O3 (0 ≤ x ≤ 0.49) determined by X-ray photoelectron spectroscopy

被引：37

作者：

Feng, Zhaoqing ^{[1
]}

Feng, Qian ^{[1
]}

Zhang, Jincheng ^{[1
]}

Li, Xiang ^{[1
]}

Li, Fuguo ^{[1
]}

Huang, Lu ^{[1
]}

Chen, Hong-Yan ^{[2
]}

Lu, Hong-Liang ^{[2
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China

[2] Fudan Univ, Sch Microelect, Inst Adv Nanodevices, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2018年 / 434卷

基金：

中国国家自然科学基金;

关键词：

(AlxGa1-x)(2)O-3 (0 <= x <= 0.49); SiO2; Band alignment; XPS; OFFSETS;

D O I：

10.1016/j.apsusc.2017.10.156

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, we report the investigation of the band alignment of SiO2/(AlxGa1-x)(2)O-3 (0 <= x <= 0.49) utilizing the high resolution X-ray photoelectron spectroscopy (XPS) measurements. The single crystallinity and orientation of beta-(AlxGa1-x)(2)O-3 films grown on sapphire by pulsed laser deposition were studied with the high resolution X-ray diffraction. The Ga2p(3/2) and Si 2p core-level spectra as well as valence band spectra were used in the analysis of band alignment. As the mole fraction x of Al increases from 0 to 0.49, the bandgap and conduction band offset values of SiO2/(AlxGa1-x)(2)O-3 increases from 4.9 to 5.6 eV and from 1.5 to 2.1 eV, respectively, while that of valence band offset decreases from 2.2 to 0.9 eV. From the results obtained, the energy band diagram of the studied SiO2/(AlxGa1-x)(2)O-3 (0 <= x <= 0.49) interfaces is found to be of type I. Energy band lineups of SiO2/(AlxGa1-x)(2)O-3 were thus determined which can be used as for Ga2O3 based power device technology. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：440 / 444

页数：5

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