High-Precision Low-Temperature Drift LDO Regulator Tailored for Time-Domain Temperature Sensors

被引:1
作者
Raducan, Cristian [1 ]
Neag, Marius [1 ]
Grajdeanu, Alina [1 ]
Topa, Marina [1 ]
Negoita, Andrei [2 ]
机构
[1] Tech Univ Cluj Napoca, Dept Bases Elect, Cluj Napoca 400114, Romania
[2] Infineon Technol, Bucharest 020335, Romania
关键词
time-domain temperature sensor; precision LDO; thermal drift; load and line regulation; fast response to load transients; large loop gain; multiple-feedback OpAmp; multiple-feedback stability analysis; ring oscillator; SLEW-RATE; CMOS; FEEDBACK; ENHANCEMENT; DESIGN;
D O I
10.3390/s22041518
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper proposes a high-precision LDO with low-temperature drift suitable for sensitive time-domain temperature sensors. Its topology is based on multiple feedback loops and a novel approach to frequency compensation, that allows the LDO to maintain a large DC gain while handling capacitive loads that vary over a wide range. The key design constraints are derived by using a simplified, yet intuitive and effective, small-signal analysis devised for LDOs with multiple feedback loops. Simulation and measurement results are presented for implementation in a standard 130 nm CMOS process: the LDO outputs a stable 1 V voltage, when the input voltage varies between 1.25 V to 1.5 V, the load current between 0 and 100 mA, and the load capacitor between zero and 400 pF. It exhibits a DC load regulation of 1 mu V/mA, a 288 mu V output offset with a standard deviation of 9.5 mV. A key feature for the envisaged application is the very low thermal drift of the output offset: only 14.4 mV across the temperature range of -40 degrees C to +150 degrees C. Overall, the LDO output voltage stays within +/-3.5% of the nominal DC value over the entire line voltage, load, and temperature ranges, without trimming. The LDO requires only 1.4 mu A quiescent current, yet it provides excellent responses to load transients. The output voltage undershoot and overshoot caused by the load current jumping between 0 and 100 mA in 1 mu s are: 10%/22% for CL = 0 and 12%/16% for CL = 400 pF, respectively. A comparative analysis against seven LDOs published in the last decade, designed for similar levels of supply voltage and output voltage and current, shows that the LDO presented here is the best option for supplying sensitive time-domain temperature sensors. The smallest thermal drift of the output offset, smaller than +/-15 mV, that is, 6.7 times smaller than its closest competitor, and the best overall performance when PSR up to 1 kHz, was considered.
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页数:25
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