Silicon Based MM Wave IC Design for 60 GHz and Beyond

被引：0

作者：

Ma, Kaixue ^{[1
]}

Meng, Fanyi ^{[1
]}

Mou, Shouxian ^{[1
]}

Yeo, Kiat Seng ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Peoples R China

[2] Singapore Univ Technol & Design, Engn Prod Dev, Singapore, Singapore

来源：

2017 10TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT) | 2017年

关键词：

Silicon; RFIC; Millimeter wave; IC design; WiFi; Wireless communication; System-on-chip; Packaging; TUNING-RANGE VCO; HIGH-PAE; TRANSCEIVER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper briefly presents a 60-GHz dual-chip wireless communication solution adhering to the IEEE 802.11 ad standards. The proposed fully-integrated transceiver front-end chip (RFIC) using a sub-harmonic sliding-IF scheme to reduce the design difficulty on VCO, was implemented based on a low cost SiGe 0.18um BiCMOS process and has a compact chip area of 5mm by 3.9mm with a low power consumption of 218mW for TX mode and 261mW for Rx mode. The baseband IC (BBIC) uses adaptive time domain equalizer to perform synchronization, automatic gain control and to lower the chip size and power consumption.

引用

页数：3

共 13 条

[1]

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[2]

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[3]

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[4]

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[7]

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[9]

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[10] A DC TO 30-GHz ULTRA-WIDEBAND CMOS T/R SWITCH [J].

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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2011, 53 (09) :2072-2075

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