The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals

被引：1
作者：
Sprincean, V. [1 ]
Vatavu, E. [1 ]
Dmitroglo, L. [1 ]
Untila, D. [1 ]
Caraman, I. [2 ]
Caraman, M. [1 ]
机构：
[1] Moldova State Univ, 60 A Mateevici, Kishinev, Moldova
[2] Univ Bacau, Bacau, Romania
来源：
4TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGIES AND BIOMEDICAL ENGINEERING, ICNBME-2019 | 2020年 / 77卷
关键词：
Ga2Se3; Ga2O3; XRD; SEM; EDX; OPTICAL ANISOTROPY; THERMAL-OXIDATION; VACANCY; NANOSHEETS; FILMS; RAMAN;
D O I：
10.1007/978-3-030-31866-6_42
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
The chemical composition and structure of Ga2O3 obtained by thermal treatment (TT) in air of beta-Ga2Se3 crystals were studied using the X-ray diffraction (XRD) method, Raman spectroscopy, EDX, and SEM. The surface of the Ga2Se3 crystal air annealed at 770 K is covered by beta-Ga2O3 layer of microcrystallites and as well as by beta-Ga2Se3 crystallites. The oxygen is non-homogeniously distributed on the surface of the 770 K annealed sample. The sample obtained by TT at 1150 K consists of nanolamella, nanotowers, and nanobars of beta-Ga2O3, their size being estimated to 10-200 nm.
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页码：207 / 211
页数：5
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