Electrical characteristics of cadmium doped InAs grown by metalorganic vapor phase epitaxy

The use of dimethylcadmium as a potential p-type dopant source during the growth of InAs by metalorganic vapor phase epitaxy has been investigated. Thermoelectric measurements were used to accurately determine the doping density of the epilayers. A linear doping efficiency was attained for low DMCd mole fractions within the 550 degrees C to 650 degrees C growth temperature range with the doping density spanning from low 10(16) to a maximum of 6 x 10(17) cm(-3). The surfactant action of a small mole fraction of Sb increased the maximum p-type doping density by a factor of two. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3678452]