40 GHz small-signal cross-gain modulation in 1.3 μm quantum dot semiconductor optical amplifiers

被引：13

作者：

Meuer, C. ^{[1
]}

Kim, J. ^{[1
]}

Laemmlin, M. ^{[1
]}

Liebich, S. ^{[1
]}

Bimberg, D. ^{[1
]}

Capua, A. ^{[2
]}

Eisenstein, G. ^{[2
]}

Bonk, R. ^{[3
]}

Vallaitis, T. ^{[3
]}

Leuthold, J. ^{[3
]}

Kovsh, A. R. ^{[4
]}

Krestnikov, I. L. ^{[4
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

[3] Univ Karlsruhe, Inst Hochfrequenztech & Quantenelekt, D-76131 Karlsruhe, Germany

[4] Innolume GmbH, D-44263 Dortmund, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2969060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Small-signal cross-gain modulation of quantum dot based semiconductor optical amplifiers (QD SOAs), having a dot-in-a-well structure, is presented, demonstrating superiority for ultrahigh bit rate wavelength conversion. Optimization of the QD SOA high speed characteristics via bias current and optical pump power is presented and a small-signal 3 dB bandwidth exceeding 40 GHz is demonstrated. The p-doped samples investigated here enable small-signal wavelength conversion within a range of 30 nm, limited mainly by the gain bandwidth. (c) 2008 American Institute of Physics.

引用

页数：3

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