A V-Band CMOS Low-DC-Power Wide-Locking-Range Divide-by-6 Injection-Locked Frequency Divider Using Transformer Coupling

被引：7

作者：

Chang, Hong-Yeh ^{[1
]}

Chen, Wei-Cheng ^{[1
]}

Yeh, Han-Non ^{[1
]}

Shen, Ian Yi-En ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Taoyuan 32001, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2020年 / 30卷 / 06期

关键词：

CMOS; high speed; injection-locked frequency divider (ILFD); microwave and millimeter-wave (MMW); radio frequency integrated circuit (RFIC)/monolithic microwave integrated circuit (MMIC); V-band;

D O I：

10.1109/LMWC.2020.2992107

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A V-band low-dc-power wide-locking-range divide-by-6 injection-locked frequency divider (ILFD) using a 90-nm CMOS process is proposed in this letter. The proposed innovative topology is composed of current-reused oscillation cores with transformer coupling. Moreover, the dc bias of the injectors can be properly applied to widen the locking range (LR). With a core dc power of 5.6 mW and an input power of -5 dBm, the measured maximum locking is 5.6 GHz (9.8%) from 54.5 to 60.1 GHz. When compared to the previously reported V-band ILFDs, this work features a high division ratio, low dc power, wide LR, and good sensitivity.

引用

页码：593 / 596

页数：4

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