Thermal modelling of laser processing for silicon photovoltaics

被引：0

作者：

Baldus-Jeursen, Christopher ^{[1
]}

Sivoththaman, Siva ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Ctr Adv Photovolta Devices & Syst, Waterloo, ON N2L 3G1, Canada

来源：

PHOTONICS NORTH 2011 | 2011年 / 8007卷

关键词：

silicon; plastic deformation; temperature gradient mechanism; Gaussian distribution; radiation; convection; heat transfer;

D O I：

10.1117/12.905271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Laser bending of ductile materials is a promising manufacturing method for industry because it is contact free, and without spring-back effect. Although laser bending of metals (stainless steel, titanium, aluminum) has been explored since the early 1980's, laser bending of brittle materials such as silicon, borosilicate glass, and ceramics, is a relatively new field of research. Deformed silicon structures find application in microchips (clip chips, MEMS), and silicon cantilevers for atomic force microscopes. In the field of photovoltaics, silicon laser bending allows for novel cell architectures. The subject of this paper is the experimental investigations of laser bending of silicon combined with simulation techniques to model the temperature field.

引用

页数：6

共 4 条

[1]

Dewitt D., 2006, FUNDAMENTALS HEAT MA, P8

[2] New aspects of the plastic deformation of silicon -: prerequisites for the reshaping of silicon microelements [J].