Using body biasing to control phase-noise of CMOS LC oscillators

被引:3
作者
Rashtian, H. [1 ]
Mirabbasi, S. [1 ]
机构
[1] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
VCO;
D O I
10.1049/el.2011.3739
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An approach to adjusting and optimising the phase-noise performance of CMOS LC oscillators is presented. The technique is based on controlling the bulk-source voltage of the cross-coupled transistors in the oscillator core. It is shown that the impedance in the path of the current through the oscillator core to ground at the second harmonic of oscillation can be maximised through changing the value of the parasitic capacitances. The technique is validated by measured results from a proof-of-concept LC oscillator fabricated in a 90 nm CMOS process.
引用
收藏
页码:158 / U50
页数:2
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