Controlled Ambipolar-to-Unipolar Conversion in Graphene Field-Effect Transistors Through Surface Coating with Poly(ethylene imine)/Poly(ethylene glycol) Films

被引：32
作者：
Yan, Zheng [1 ,2 ]
Yao, Jun [3 ]
Sun, Zhengzong [1 ,2 ]
Zhu, Yu [1 ,2 ]
Tour, James M. [1 ,2 ,3 ,4 ]
机构：
[1] Rice Univ, Dept Chem, Houston, TX 77005 USA
[2] Rice Univ, Richard E Smalley Inst Nanoscale Sci & Technol, Houston, TX 77005 USA
[3] Rice Univ, Appl Phys Program, Dept Bioengn, Houston, TX 77005 USA
[4] Rice Univ, Dept Mech Engn & Mat Sci, Houston, TX 77005 USA
来源：
SMALL | 2012年 / 8卷 / 01期
关键词：
graphene; field-effect transistors; unipolar n-type doping; ambipolor n-type doping; CARBON NANOTUBES;
D O I：
10.1002/smll.201101528
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A controlled ambipolar-to-unipolar (n-type) conversion, along with a maximum fourfold increase in the electron mobility, in graphene field-effect transistors (FETs) is achieved by coating the surface of graphene with a layer of a mixed polymer system, poly(ethylene imine) (PEI) in poly(ethylene glycol) (PEG). The PEG serves as a physisorption adhesion agent for the PEI. Both unipolar and ambipolar n-type doping can be realized by adjusting the thickness of PEI films atop the graphene channel. The observed phenomena are attributed to the doping/dedoping effects of the external PEI film. The study provides a guide to engineering graphene transport properties through chemical modifications.
引用
收藏
页码：59 / 62
页数：4
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