Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources

被引：2

作者：

Takado, N. ^{[1
]}

Matsushita, D. ^{[1
]}

Fujino, I. ^{[1
]}

Hatayarna, A. ^{[1
]}

Tobari, H. ^{[2
]}

Inoue, T. ^{[2
]}

机构：

[1] Keio Univ, Kouhoku Ku, Yokohama, Kanagawa 2238522, Japan

[2] Japan Atom Energy Agcy, Naka, Ibaraki 3110193, Japan

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.2802583

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Production and transport processes of the Ho atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H(-) ions. In this analysis, we focus on the effect of the energy relaxation of the H(0) atoms at the wall on the H(-) ion production from the H(0) atoms. The result indicates that, by considering the energy relaxation of the H(0) atoms at the wall, the production profile of the surface-produced H(-) ion is well reflected in the production profile of the H(0) atom production. (C) 2008 American Institute of Physics.

引用

页数：4

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