Effect of energy relaxation of H0 atoms at the wall on the production profile of H- ions in large negative ion sources

被引：2
|
作者：
Takado, N. [1 ]
Matsushita, D. [1 ]
Fujino, I. [1 ]
Hatayarna, A. [1 ]
Tobari, H. [2 ]
Inoue, T. [2 ]
机构：
[1] Keio Univ, Kouhoku Ku, Yokohama, Kanagawa 2238522, Japan
[2] Japan Atom Energy Agcy, Naka, Ibaraki 3110193, Japan
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2008年 / 79卷 / 02期
关键词：
D O I：
10.1063/1.2802583
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Production and transport processes of the Ho atoms are numerically simulated using a three-dimensional Monte Carlo transport code. The code is applied to the large JAEA 10 ampere negative ion source under a Cs-seeded condition to obtain a spatial distribution of surface-produced H(-) ions. In this analysis, we focus on the effect of the energy relaxation of the H(0) atoms at the wall on the H(-) ion production from the H(0) atoms. The result indicates that, by considering the energy relaxation of the H(0) atoms at the wall, the production profile of the surface-produced H(-) ion is well reflected in the production profile of the H(0) atom production. (C) 2008 American Institute of Physics.
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页数：4
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