Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell

被引：6
作者：
Li, Jiayan [1 ,2 ]
Cai, Min [1 ,2 ]
Wu, Xiaowei [1 ,2 ]
Li, Pengting [1 ,2 ]
Tan, Yi [1 ,2 ]
机构：
[1] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China
[2] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
来源：
SOLAR ENERGY | 2020年 / 202卷
基金：
中国国家自然科学基金;
关键词：
Multi-crystalline silicon; Texturization; Wet chemical etching; Acid etching; DIAMOND-WIRE; MULTICRYSTALLINE SILICON; SIC-SLURRY; WAFERS; TEXTURIZATION;
D O I：
10.1016/j.solener.2020.03.107
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol-polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 degrees C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The R-ave of incident light originating from the direction parallel to saw marks was 22-27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6-0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.
引用
收藏
页码：190 / 197
页数：8
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