Electroluminescence of ZnO nanocrystal in sputtered ZnO-SiO2 nanocomposite light-emitting devices

被引：10

作者：

Chen, Jiun-Ting ^{[1
]}

Lai, Wei-Chih ^{[1
,2
]}

Chen, Chi-Heng ^{[1
]}

Yang, Ya-Yu ^{[1
]}

Sheu, Jinn-Kong ^{[1
,2
]}

Lai, Li-Wen ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Ind Technol Res Inst, ITRI S, Tainan 734, Taiwan

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 12期

关键词：

PHOTOLUMINESCENCE; EMISSION;

D O I：

10.1364/OE.19.011873

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have demonstrated the electroluminescence (EL) of Ga:ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure lightemitting devices (LEDs). ZnO nano-clusters with sizes distributing from 2 to 7nm were found inside the co-sputtered i-ZnO-SiO2 nanocomposite layer under the observation of high-resolution transparent electron microscope. A clear UV EL at 376 nm from i-ZnO-SiO2 nanocomposite in these p-i-n heterostructure LEDs was observed under the forward current of 9 mA. The EL emission peak at 376 and 427nm of the Ga: ZnO/i-ZnO-SiO2 nanocomposite/p-GaN n-i-p heterostructure LEDs were attributed to the radiative recombination from the ZnO clusters and the Mg acceptor levels in the p-GaN layer, respectively. (C) 2011 Optical Society of America

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页码：11873 / 11879

页数：7

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